• CN:11-2187/TH
  • ISSN:0577-6686

机械工程学报 ›› 2022, Vol. 58 ›› Issue (2): 34-42.doi: 10.3901/JME.2022.02.034

• 微纳连接新材料 • 上一篇    下一篇

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基于磁控溅射制备金属纳米颗粒的低温键合技术研究

方君鹏1, 王谦1,2, 蔡坚1,2, 万翰林1, 宋昌明1, 郑凯3, 周亦康3   

  1. 1. 清华大学集成电路学院 北京 100084;
    2. 清华大学北京信息科学与技术国家研究中心 北京 100084;
    3. 北方集成电路技术创新中心(北京)有限公司 北京 100176
  • 收稿日期:2021-10-09 修回日期:2021-12-20 出版日期:2022-01-20 发布日期:2022-03-19
  • 通讯作者: 王谦(通信作者),男,1973年出生,博士,副教授,博士研究生导师。主要研究方向为先进封装与系统集成。E-mail:wang-qian@tsinghua.edu.cn
  • 作者简介:方君鹏,男,1992年出生,博士研究生。主要研究方向为先进封装与系统集成。E-mail:fjp18@mails.tsinghua.edu.cn

Research on Low-temperature Bonding Technology Using Metal Nanoparticles Prepared by Magnetron Sputtering

FANG Junpeng1, WANG Qian1,2, CAI Jian1,2, WAN Hanlin1, SONG Changming1, ZHENG Kai3, ZHOU Yikang3   

  1. 1. School of Integrated Circuits, Tsinghua University, Beijing 100084;
    2. Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084;
    3. Semiconductor Technology Innovation Center(Beijing) Corp., Beijing 100176
  • Received:2021-10-09 Revised:2021-12-20 Online:2022-01-20 Published:2022-03-19

摘要: 三维集成是后摩尔时代异质集成的关键技术路线之一,片间互连是其关键技术。传统的金属热压键合技术由于存在键合温度高和键合时间长的问题,不再适用于三维集成技术的发展需求,新型的具有低温、短时和高可靠性特点的片间互连技术受到广泛关注。提出一种基于磁控溅射制备金属纳米颗粒的低温键合方法。首先采用磁控溅射方法分别进行金属Ag和Au纳米颗粒的制备,并将获得的金属纳米颗粒作为键合界面的修饰层应用于低温键合试验,实现了键合温度在200℃以内、键合时间为3 min的低温短时热压键合。接下来对键合之后的样品进行了剪切强度测试和表征,结果表明采用Ag纳米颗粒作为纳米修饰层的键合样品的平均剪切强度超过了10 MPa,采用Au纳米颗粒修饰的键合样品的平均剪切强度超过了15 MPa,且上述剪切强度都超过了Cr和二氧化硅之间的薄膜粘附强度,能够满足后续工艺的要求。此外还分别观测了不同样品的键合界面微观组织形貌,并且据此分析了基于磁控溅射制备金属纳米颗粒的低温键合技术的键合机理。

关键词: 片间互连, 纳米修饰, 低温短时热压键合

Abstract: Three dimensional integration (3D integration) is one of the key technology routes for heterogeneous integration in post-Moore era, and inter-chip interconnection is the key technology of 3D integration. The traditional metal thermo-compression bonding technology exists problems of high bonding temperature and long bonding time, which is no longer suitable for the development needs of 3D integration technology. New inter-chip interconnection technology featuring low-temperature, time-saving and highly reliable thermo-compression bonding has attracted extensive attention. A low-temperature bonding method based on metal nanoparticles prepared by magnetron sputtering is proposed. Firstly, Ag and Au nanoparticles were separately prepared by magnetron sputtering method, and the obtained metal nanoparticles were used as the modification layer of bonding interface in the low-temperature bonding experiment. The low-temperature and time-saving thermo-compression bonding was realized with bonding temperature less than 200℃ and bonding time of 3 minutes. Then, shear strength tests of bonded samples were carried out. Test results showed that average shear strength of bonded samples with Ag nanoparticles as nano-modification layer exceeded 10 MPa; and average shear strength of bonded samples modified by Au nanoparticles exceeded 15 MPa. Both the above average shear strength exceeded the film adhesion strength between Cr and SiO2. In addition, microstructures of bonding interface of different samples were observed, and the bonding mechanism of low-temperature bonding technology based on metal nanoparticles prepared by magnetron sputtering was analyzed.

Key words: inter-chip interconnection, nano-modification, low-temperature and time-saving thermo-compression bonding

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