• CN:11-2187/TH
  • ISSN:0577-6686

机械工程学报 ›› 2016, Vol. 52 ›› Issue (5): 88-94.doi: 10.3901/JME.2016.05.088

• 微纳制造技术专栏 • 上一篇    下一篇

铜电致化学抛光抛光液的成分及其作用

单坤, 周平, 蔡吉庆, 康仁科, 郭东明   

  1. 大连理工大学精密与特种加工教育部重点实验室 大连 116024
  • 出版日期:2016-03-05 发布日期:2016-03-05
  • 作者简介:单坤,男,1988年出生,博士研究生。主要研究方向为铜的无应力加工。E-mail:shankun8888@163.com;周平(通信作者),男,1980 年出生,博士,副教授,硕士研究生导师。主要研究方向为超精密加工技术和表面功能结构设计与制造。E-mail:pzhou@dlut.edu.cn;康仁科,男,1962年出生,博士,教授,博士研究生导师。主要研究方向为超精密加工与特种加工技术;难加工材料精密高效加工技术;半导体制造技术与设备;计算机辅助设计、制造与测试。E-mail:kangrk@dlut.edu.cn
  • 基金资助:
    国家自然科学基金(91523102, 51475076)和辽宁省教育厅重点实验室基础研究(LZ2015026)资助项目

Chemical Components and Its Functions of Polishing Solution Used in Electrogenerated Chemical Polishing of Copper

SHAN Kun, ZHOU Ping, CAI Jiqing, KANG Renke, GUO Dongming   

  1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024
  • Online:2016-03-05 Published:2016-03-05

摘要: 电致化学抛光是通过电化学反应生成刻蚀剂并利用扩散控制反应实现工件表面无应力抛光的新方法,抛光液的特性则是实现扩散控制反应和可控去除的关键因素。分析电致化学抛光的基本原理,并根据理论模型提出了抛光液所应具备的基本条件。针对铜的电致化学抛光,提出以FeSO4为电活性中介体,H2SO4为pH调节剂,BTA为侧向电子传导抑制剂的抛光液。通过使用XRD以及XPS等表征手段对加工后的表面进行分析,研究了铜抛光液中的pH调节剂H2SO4以及侧向电子传导抑制剂BTA的作用机理。研究结果表明,pH调节剂H2SO4的主要功能为去除Cu表面的氧化层,从而促进刻蚀反应的进行,而BTA则通过吸附于铜工件表面,从而有效地抑制了加工过程中的侧向电子传导。

关键词: 粗糙度, 电化学反应, 电致化学抛光, 抛光液

Abstract: Electrogenerated chemical polishing (EGCP) is a new, stress-free polishing method. Stress free polishing of workpiece surface is realized by diffusion controlled chemical reaction and etchant is generated by electrochemical reaction on electrode surface. The components of polishing solution are the key factors to realize the diffusion controlled reaction and controllable material removal process. The basic principle of EGCP is analyzed, and the basic characteristics of polishing solution are proposed according to the theoretical analysis. For realizing EGCP of Cu, the FeSO4 (redox mediator), H2SO4 (pH adjusting agent) and BTA (lateral charge propagation inhibitor) are chosen as the polishing solution. Through analyzing the surface components of polished workpiece by XPS and XRD, the action mechanisms of H2SO4 and BTA are studied. The results show that the H2SO4 is benefit to promoting the etching reaction through removing the Cu oxide layer. BTA can be adsorbed on the Cu surface, and then suppresses surface lateral charge propagation.

Key words: electrochemistry reaction, electrogenerated chemical polishing, polishing solution, roughness

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