• CN:11-2187/TH
  • ISSN:0577-6686

›› 2011, Vol. 47 ›› Issue (21): 186-192.

• 论文 • 上一篇    

磁性复合磨粒化学机械抛光技术及其加工试验研究

许雪峰;郭权;黄亦申;胡建德;彭伟   

  1. 浙江工业大学特种装备制造与先进加工技术浙江省重点实验室;浙江万向精工有限公司
  • 发布日期:2011-11-05

Chemical Mechanical Polishing Using Magnetic Composite Abrasives Slurry and Experimental Study on Polishing Performance

XU Xuefeng;GUO Quan;HUANG Yishen;HU Jiande;PENG Wei   

  1. Zhejiang Provincial Key Laboratory of Special Purpose Equipment and Advanced Manufacturing Technology, Zhejiang University of Technology Zhejiang Wanxiang Precision Industry Co. Ltd.
  • Published:2011-11-05

摘要: 提出一种新型的磁性复合磨粒化学机械抛光技术。该技术利用磁性聚合物微球与SiO2磨粒组成的复合磨粒抛光液,在辅助磁场的作用下,实现了一种磨粒尺寸与硬质抛光盘微观形貌依赖性小、材料去除率较高的抛光工艺。建立直径8 mm、高度不等的稀土钕铁硼永磁体以点阵形式组合形成的4类辅助磁场。仿真计算表明,柱状下凹磁极的磁场磁力HdH/dz分布均匀,磁性微球受到的磁力一致性好。对磁性微球在抛光系统中的受力分析表明,磁性微球受到的磁力有助于复合磨粒从近抛光区域进入抛光区域,磁性复合磨粒能以二体磨损的方式划擦去除加工表面。以表面粗糙度Ra 0.5 μm的硬质抛光盘进行硅片抛光试验,施加辅助磁场前后,硅片的材料去除率从66 nm/min提高到179 nm/min,硅片表面粗糙度由抛光前Ra 405.860 nm减小到Ra 0.490 nm。

关键词: 磁性复合磨粒, 辅助磁场, 化学机械抛光, 抛光液

Abstract: A polishing method that uses an auxiliary magnetic field is proposed, in which magnetic polymer microspheres/SiO2 composite abrasives are anchored on a smooth glass tool plate by the magnetic force, and the dependence between diameter of composite abrasive and morphology of tool plate is reduced. The auxiliary magnetic field is established by NdFeB permanent magnets with 8 mm diameter and different heights. The finite element method (FEM) analysis shows that the magnetic field with a concave-down columnar section has a uniform distribution of the force of magnetic field HdH/dz. Force analyses on magnetic polymer microspheres indicate that the magnetic force could help the magnetic polymer microspheres enter the polishing area from near-polishing area, and material is polished by magnetic composite abrasives in two-body abrasion wear mechanism. Experiments of polishing silica wafer, using a glass tool plate of Ra 0.5 μm surface roughness, have shown the superior characteristics with the assistance of the magnetic field. The material removal rate is increased from 66 nm/min to 179 nm/min,and the surface roughness of wafer is decreased from Ra 405.860 nm to Ra 0.490 nm.

Key words: Auxiliary magnetic field, Chemical mechanical polishing, Magnetic composite abrasives, Slurry

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