Stress Issues in 3D Interconnect Technology Using Through Glass Vias

doi:10.3901/JME.2022.02.246

Abstract

Abstract: At present, the three-dimensional (3D) interconnection technology based on glass through vias (TGVs) has been applied to integration passive devices, three-dimensional packaging and optoelectronic device integration because of its excellent electrical and optical properties, good mechanical stability and low-cost. However, the thermal stress caused by the mismatch of thermal expansion coefficients among multi-materials structure and the complex structure of TGV would affect the performance and reliability of the device. In view of this, many scholars have carried out relevant studies. The stress issues in 3D interconnect technology using TGVs are reviewed at home and abroad survey. Thermal stress theoretical models are constructed, the mechanism of size and distribution of stress is summarized for the filled and unfilled copper of the TGVs. The local stress concentration would induce serious thermo and mechanical reliability. Secondly, after times of finite element model analysis, it is concluded that filling polymer in the vias would alleviate the residual stress. Finally, put forward some problems to be solved urgently.

Key words: through glass via(TGV), reliability, stress, crack

CLC Number:

TG156

ZHAO Jin, LI Wei, ZHONG Yi, YU Daquan, QIN Fei. Stress Issues in 3D Interconnect Technology Using Through Glass Vias[J]. Journal of Mechanical Engineering, 2022, 58(2): 246-258.

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