Abstract: A method for determining Young's modulus and residual stress of silicon microstructures is described. The method obtains Young's modulus and residual stress by measuring first resonance frequencies of silicon cantilever beams and both ends clamped beams fabricated using micromachining techniques. The beams are excited by electrostatical force and the resonance frequencies are measured using a simple optical measuring apparatus. The advantage of this method is that the measurement setup is very simple and the fabrication of samples is easy. The results that Young's modulus of (100) plane < 110 > direction single-crystal silicon thin films is 128GPa and residual stress of that is 74.7 Mpa was obtained in experiment.

Key words: Measurement, Micromechanism, Microstructure, Residual stress, Young's modulus