单晶SiC化学机械抛光液的固相催化剂研究

doi:10.3901/JME.2017.21.167

机械工程学报 ›› 2017, Vol. 53 ›› Issue (21): 167-173.doi: 10.3901/JME.2017.21.167

单晶SiC化学机械抛光液的固相催化剂研究

徐少平, 路家斌, 阎秋生, 宋涛, 潘继生

广东工业大学机电工程学院广州 510006

收稿日期:2016-10-18 修回日期:2017-06-08 出版日期:2017-11-05 发布日期:2017-11-05
作者简介:徐少平,男,1991年出生。主要研究方向为单晶SiC超光滑表面抛光加工工艺。E-mail:1023929615@qq.com;阎秋生,男,1962年出生,博士,教授,博士研究生导师。主要研究方向为难加工材料的切削、磨削加工和微细加工技术、精密分切加工。E-mail:qsyan@gdut.edu.cn
基金资助:
国家自然科学基金（51375097）、广东省自然科学基金重点（2015A030311044）和高等学校博士学科点专项科研基金（20134420110001）资助项目。

Solid Catalysts Based on Fenton Reaction for SiC Wafer in Chemical Mechanical Polishing

XU Shaoping, LU Jiabin, YAN Qiusheng, SONG Tao, PAN Jisheng

School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006

Received:2016-10-18 Revised:2017-06-08 Online:2017-11-05 Published:2017-11-05
Contact: 路家斌(通信作者),男,1970年出生,博士,教授,硕士研究生导师。主要研究方向为超精密加工、精密分切加工。E-mail:lujiabin@gdut.edu.cn

摘要/Abstract

摘要： 针对单晶SiC化学机械抛光使用的抛光液，研究了产生芬顿反应Fe、FeO、Fe₂O₃、Fe₃O₄等4种铁系固相催化剂的效果。结果发现当Fe₃O₄作为催化剂时，SiC表面能够产生明显的化学反应，生成较软易去除的SiO₂氧化层，化学机械抛光时材料去除率最高达到17.2 mg/h、表面粗糙度最低达到R_a2.5 nm。相比Fe、FeO、Fe₂O₃等固相催化剂，Fe₃O₄更适宜用作SiC的化学机械抛光。抛光液中Fe²⁺离子浓度和稳定性是决定芬顿反应速率和稳定性的重要因素，固相催化剂电离自由Fe²⁺能力的差异直接影响了化学抛光液中的Fe²⁺浓度，固相催化剂电离Fe²⁺的能力越强，抛光液中Fe²⁺浓度就越高，芬顿反应速率越快，与SiC进行化学反应速度越快，材料去除率越高，抛光质量越好。

关键词: 芬顿反应, 固相催化剂, 化学机械抛光, 去除效率, 碳化硅

Abstract: Aiming at the CMP solution of single crystal SiC, the catalytic efficiency of Fe-based solid catalysts such as Fe, FeO, Fe₂O₃ and Fe₃O₄ are studied. When Fe₃O₄ is used as the catalyst of Fenton reaction, an obviously chemical reaction happens on the surface of SiC and a relatively soft SiO₂ layer which is easier to be removed is generated, and the highest material removal rate which is 17.2 mg/h and the minimum surface roughness which is R_a2.5 nm are obtained after chemical mechanical polishing. Fe₃O₄ is more appropriate for CMP of SiC compared with other solid catalysts such as Fe, FeO and Fe₂O₃. The concentration and stability of Fe²⁺ in chemical polishing solution are crucial factors deciding the rate and stability of Fenton reaction, and the concentration of Fe²⁺ is directly affected by the ability of ionizing free Fe²⁺ of solid catalyst. The stronger the ability of ionizing free Fe²⁺ of solid catalyst is, the higher the concentration of Fe²⁺ in polishing solution will be, and then the faster the rate of Fenton reaction will be. In this case, a higher material removal rate and a better polishing quality of SiC will be obtained in CMP.

Key words: chemical mechanical polishing, Fenton reaction, removal efficiency, SiC, solid catalyst

中图分类号:

TH161

徐少平, 路家斌, 阎秋生, 宋涛, 潘继生. 单晶SiC化学机械抛光液的固相催化剂研究[J]. 机械工程学报, 2017, 53(21): 167-173.

XU Shaoping, LU Jiabin, YAN Qiusheng, SONG Tao, PAN Jisheng. Solid Catalysts Based on Fenton Reaction for SiC Wafer in Chemical Mechanical Polishing[J]. Journal of Mechanical Engineering, 2017, 53(21): 167-173.

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单晶SiC化学机械抛光液的固相催化剂研究

Solid Catalysts Based on Fenton Reaction for SiC Wafer in Chemical Mechanical Polishing

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