[1] ZHOU S J,ZHAO X Y,DU P,et al. Application of patterned sapphire substrate for III-nitride light-emitting diodes[J]. Nanoscale,2022,14(13):4887-4907. [2] WANG D H,HOU W T,LI N,et al. Defects and optical property of single-crystal sapphire fibers grown by edge-defined film-fed growth method[J]. Journal of Inorganic Materials,2020,35(9):1053-1058. [3] HUSSELS J,CHENG C,SALUMBIDES E J,et al. Chirp-compensated pulsed titanium-sapphire laser system for precision spectroscopy[J]. Optics Letters,2021,45(21):1-5. [4] 李鹏博,ZEIDLER S,LEONARDI M,等. KAGRA引力波探测器中蓝宝石测试镜光学性质研究[J]. 天文学报,2021,62(6):41-53. LI Pengbo,ZEIDLER S,LEONARDI M,et al. Optical characterization of sapphire test mirror in KAGRA gravitational wave detector[J]. Acta Astronomica Sinica,2021,62(6):41-53. [5] HALLOCK B,DUMAS P,SHOREY A,et al. Recent advances in deterministic low-cost finishing of sapphire windows[J]. Window and Dome Technologies and Materials IX,2005,5786:154-164. [6] XU W H,LU X C,PAN G S,et al. Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; Pad and sapphire substrate during chemical mechanical polishing (CMP)[J]. Applied Surface Science,2011,257(7):2905-2911. [7] GAN Y,ZHANG F H. Review on formation mechanism of chemical reaction layer during chemical mechanical polishing of monocrystalline SiC and sapphire substrates[J]. Chinese Science Bulletin,2016,61(36):3930-3939. [8] LI Z Y,DENG Z H,HU Y X. Effects of polishing parameters on surface quality in sapphire double-sided CMP[J]. Ceramics International,2020,46(9):13356-13364. [9] PINKAS M,LOTEM H,GOLAN Y,et al. Thermal healing of the sub-surface damage layer in sapphire[J]. Materials Chemistry and Physics,2010,124(1):323-329. [10] PARK H,CHAN H M. A novel process for the generation of pristine sapphire surfaces[J]. Thin Solid Films,2002,422(1-2):135-140. [11] FENG C Q,WU L,CHEN P,et al. Repairing slight damages on monocrystalline silicon surface by thermal annealing[J]. Materials Research Express,2021,8(4):1-8. [12] 李玮. 垂直磁各向异性FePt薄膜的微观结构与织构研究[D]. 北京:北京科技大学,2018. LI Wei. Research on the microstructure and texture of perpendicular magnetic anisotropy FePt thin films[D]. Beijing:University of Science and Technology Beijing,2018. [13] THUNE E,FAKIH A,MATRINGE C,et al. Understanding of one dimensional ordering mechanisms at the (001) sapphire vicinal surface[J]. Journal of Applied Physics,2017,121(1):015301. [14] 梁志强,钟劲,林海,等. 蓝宝石精密磨削表层热修复特性研究[J]. 机械工程学报,2020,56(17):190-197. LIANG Zhiqiang,ZHONG Jin,LIN Hai,et al. Research on thermal repairing characteristics of sapphire precision grinding surface[J]. Journal of Mechanical Engineering,2020,56(17):190-197. [15] BROCKMAN J,SAMANT M G,ROCHE K P,et al. Substrate-induced disorder in V2O3 thin films grown on annealed c-plane sapphire substrates[J]. Applied Physics Letters,2012,101(5):1-5. [16] BISWA S,MAHITOS H. Impact of annealing temperature on structural,electrical and optical properties of epitaxial GaN thin films grown on sapphire substrates by PA-MBE[J]. Physics,2015,96(5):1316-1319. [17] OYE M M,HURST J B,SHAHRJERDI D,et al. Atomic force microscopy study of sapphire surfaces annealed with a H2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH)3[J]. Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,2006,24(3):1572-1576. [18] CUCCUREDDU F,MURPHY S,SHVETS I V,et al. Surface morphology of c-plane sapphire (α-alumina) produced by high temperature anneal[J]. Surface Science,2010,604(15-16):1294-1299. [19] ZHANG Y N,LIN B,LI Z C. An overview of recent advances in chemical mechanical polishing (CMP) of sapphire substrates[J]. ECS Transactions,2013,52(1):495-500. [20] SHI X L,PAN G S,ZHOU Y,et al. A study of chemical products formed on sapphire (1) during chemical-mechanical polishing[J]. Surface and Coatings Technology,2015,270:206-220. [21] ZHOU Y,PAN G S,GONG H,et al. Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms[J]. Colloids and Surfaces A:Physicochemical and Engineering Aspects,2017,513:153-159. |