纳米银微焊点阵列的超快激光图形化沉积及其芯片封装研究

doi:10.3901/JME.2022.02.166

机械工程学报 ›› 2022, Vol. 58 ›› Issue (2): 166-175.doi: 10.3901/JME.2022.02.166

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纳米银微焊点阵列的超快激光图形化沉积及其芯片封装研究

吴永超¹, 王帅奇², 郭伟¹, 刘磊², 邹贵生², 彭鹏¹

1. 北京航空航天大学机械工程及自动化学院北京 100191;
2. 清华大学机械工程系北京 100084

收稿日期:2021-05-03 修回日期:2021-10-14 出版日期:2022-01-20 发布日期:2022-03-19
通讯作者: 彭鹏(通信作者),男,1985年出生,博士,副教授,博士研究生导师。主要从事激光加工、纳连接、焊接冶金、低温封装及水处理等方面的研究。E-mail:ppeng@buaa.edu.cn
作者简介:吴永超,男,1992年出生,博士研究生。主要从事激光加工、脉冲激光沉积、纳米材料连接和芯片封装等方面的研究。E-mail:wuyongchao@buaa.edu.cn
基金资助:
国家自然科学基金（52075287）和国家重点研发计划（2017YFB1104900）资助项目。

Patterning Deposition of Nano-sliver Micro Bumps Array by Ultrafast Laser and Its Chip Packaging Research

WU Yongchao¹, WANG Shuaiqi², GUO Wei¹, LIU Lei², ZOU Guisheng², PENG Peng¹

1. School of Mechanical Engineering & Automation, Beihang University, Beijing 100191;
2. School of Mechanical Engineering, Tsinghua University, Beijing 100084

Received:2021-05-03 Revised:2021-10-14 Online:2022-01-20 Published:2022-03-19

摘要/Abstract

摘要： 随着集成电路芯片封装向小型化、集成化方向的不断发展，无铅锡基钎料性能已不能满足目前集成电路封装的需求。本文提出了一种脉冲激光图形化沉积纳米金属颗粒制备小尺寸、细节距焊点阵列的工艺，用于替代集成电路芯片封装中传统锡基焊点。采用图形化沉积的纳米银焊点阵列连接Si芯片及覆铜陶瓷（DBC）基板来验证该工艺在集成电路倒装芯片封装中的可行性。结果表明，采用聚酰亚胺胶带作为掩膜，可成功沉积出特征尺寸100 μm的银焊点阵列，其最大高度50 μm且呈锥形形貌。焊点锥形形貌的主要形成原因是沉积过程中纳米颗粒在掩膜孔内壁积累造成掩膜孔径不断减小及掩膜孔深度阻碍了颗粒在孔边缘的沉积。在250℃-3 MPa-10 min的热压连接参数下，形成的焊点微观结构呈中心致密、边缘疏松状态。接头剪切强度随焊点沉积高度的增加而增加，当沉积高度为50 μm时，接头强度达到20 MPa以上，剪切断裂主要发生在银焊点与DBC基板的连接界面处，断裂方式为韧性断裂。

关键词: 脉冲激光沉积, 图形化封装, 银焊点阵列, 热压烧结, 剪切强度

Abstract: With the continuous development of integrated circuit chip packaging in the direction of miniaturization and integration, the performance of lead-free tin-based solder can no longer meet the current requirements. A novel technology of pulsed laser patterning deposition of metal nanoparticles is proposed to prepare small-sized and fine pitch bumps array, which is used to replace the traditional tin-based solder bumps in integrated circuit chip packaging. In order to verify the feasibility of this process in integrated circuit chip packaging, the patterning deposited nano-silver bumps array is used to connect Si chip and direct bonding copper (DBC) substrate. The results show that the silver bumps array with feature size of 100 μm can be deposited by PI tape mask successfully, with a maximum height of 50 μm and a tapered morphology. The tapered morphology is mainly attribute to the accumulation of nanoparticles on the inner wall of mask holes during deposition causing the decreasing of hole size and the depth of the mask hole hinders the deposition of nanoparticles on the bottom edge of the hole. Under the hot-press sintering parameters of 250℃-3 MPa-10 min, the joints are successfully prepared, with dense microstructure in the bumps center and loose in the edge. The shear strength of the joint increases with the deposition height of sliver bumps, and the strength reaches 20 MPa with a 50 μm bump height. The shear fracture mainly occurs at the interface between Ag bumps and DBC substrate, and the fracture mode is ductile fracture.

Key words: pulsed laser deposition, patterning packaging, sliver bumps array, hot pressed sintering, shear strength

中图分类号:

TG306

吴永超, 王帅奇, 郭伟, 刘磊, 邹贵生, 彭鹏. 纳米银微焊点阵列的超快激光图形化沉积及其芯片封装研究[J]. 机械工程学报, 2022, 58(2): 166-175.

WU Yongchao, WANG Shuaiqi, GUO Wei, LIU Lei, ZOU Guisheng, PENG Peng. Patterning Deposition of Nano-sliver Micro Bumps Array by Ultrafast Laser and Its Chip Packaging Research[J]. Journal of Mechanical Engineering, 2022, 58(2): 166-175.

参考文献

[1] JIE F,ALDRETE M,SHAH M,et al. Thermal compression bonding for fine pitch solder interconnects[C]//2015 IEEE 65th Electronic Components and Technology Conference (ECTC). May 26-29,2015,San Diego,CA,USA. New York:IEEE:7-11.
[2] LI Ming,TIAN Dewen,CHEUNG Yiuming,et al. A high throughput and reliable thermal compression bonding process for advanced interconnections[C]//2015 IEEE 65th Electronic Components and Technology Conference (ECTC). May 26-29,2015,San Diego,CA,USA. New York:IEEE:603-608.
[3] 邹贵生,闫剑锋,母凤文,等. 微连接和纳连接的研究新进展[J]. 焊接学报,2011,32(4):107-112. ZOU Guisheng,YAN Jianfeng,MU Fengwen,et al. Recent progress in microjoining and nanojoining[J]. Transactions of The China Welding Institution,2011,32(4):107-112.
[4] AHARI A,HSIAO A,BATY G,et al. Microstructure signature evolution in solder joints,solder bumps,and micro-bumps interconnection in a large 2.5D FCBGA package during thermo-mechanical cycling[C]//2019 IEEE 69th Electronic Components and Technology Conference (ECTC),May 28-31,2019,Las Vegas,NV,USA. New York:IEEE:1099-1105.
[5] ZHU Q S,GAO F,MA Huicai,et al. Failure behavior of flip chip solder joint under coupling condition of thermal cycling and electrical current[J]. Journal of Materials Science:Materials in Electronics,2018,29(1):5025-5033.
[6] HO C E,YANG S C,KAO C R. Interfacial reaction issues for lead-free electronic solders[M]. New York:Springer,2007.
[7] LU Minhua. Effect of microstructure and alloy doping on electromigration in Pb-free solder interconnect[C]//2013 IEEE International Integrated Reliability Workshop Final Report,October 13-17,2013,South Lake Tahoe,CA,USA. New York:IEEE:190-196.
[8] LAI Yishan,CHIU Yingta,CHEN Jiunn. Electromigration reliability and morphologies of Cu pillar flip-chip solder joints with Cu substrate pad metallization[J]. Journal of Electronic Materials,2008,37(10):1624-1630.
[9] CHIN H S,CHEONG K Y,ISMAIL A B. A review on die attach materials for SiC-based high-temperature power devices[J]. Metallurgical & Materials Transactions B,2010,41(4):824-832.
[10] GUO Wei,ZHANG Hongqiang,ZHANG Xiaoying,et al. Preparation of nanoparticle and nanowire mixed pastes and their low temperature sintering[J]. Journal of Alloys & Compounds,2017,690:86-94.
[11] SUGANUMA K,SAKAMOTO S,KAGAMI N,et al. Low-temperature low-pressure die attach with hybrid silver particle paste[J]. Microelectronics Reliability,2012,52(2):375-380.
[12] MANIKAM V R,CHEONG K Y. Die attach materials for high temperature applications:A review[J]. IEEE Transactions on Components,Packaging and Manufacturing Technology,2011,1(4):457-478.
[13] 张颖川,闫剑锋,邹贵生,等. 纳米银与纳米铜混合焊膏用于电子封装低温烧结连接[J]. 焊接学报,2013,34(8):17-21. ZHANG Yingchuan,YAN Jianfeng,ZOU Guisheng,et al. Low temperature sintering-bonding using mixed Cu+Ag nanoparticle paste for packaging application[J]. Transactions of The China Welding Institution,2013,34(8):17-21.
[14] ZHANG H,NAGAO S,SUGANUMA K. Addition of SiC particles to Ag die-attach paste to improve high-temperature stability;grain growth kinetics of sintered porous Ag[J]. Journal of Electronic Materials,2015,44(10):3896-3903.
[15] WU Zijian,CAI Jian,WANG Junqiang,et al. Low-temperature Cu-Cu bonding using silver nanoparticles fabricated by physical vapor deposition[J]. Journal of Electronic Materials,2018,47(2):988-993.
[16] 王帅,计红军,李明雨,等. 用于电子封装的纳米银浆低温无压烧结连接的研究[J]. 电子工艺技术,2012,33(6):317-319. WANG Shuai,JI Hongjun,LI Mingyu,et al. Pressureless low temperature sintering of Ag nanoparticles applied to electronic packaging[J]. Electronics Process Technology,2012,33(6):317-319.
[17] PAKNEJAD S A,MANNAN S H. Review of silver nanoparticle based die attach materials for high power/temperature applications[J]. Microelectronics Reliability,2017,70:1-11.
[18] LI Mingyu,XIAO Yong,ZHANG Zhihao,et al. Bimodal sintered silver nanoparticle paste with ultrahigh thermal conductivity and shear strength for high temperature thermal interface material applications[J]. ACS Applied Materials & Interfaces,2015,7(17):9157-9168.
[19] 杨金龙,董长城,骆健. 新型功率模块封装中纳米银低温烧结技术的研究进展[J]. 材料导报,2019,33(34):360-364. YANG Jinlong,DONG Changcheng,LUO Jian. Development of low-temperature sintered nanoscale silver for new power device packaging[J]. Materials Reports,2019,33(34):360-364.
[20] GUO Wei,ZENG Zhi,ZHANG Xiaoying,et al. Low-temperature sintering bonding using silver nanoparticle paste for electronics packaging[J]. Journal of Nanomaterials,2015,2:1-7.
[21] GILLMAN A,ROELOFS M J G H,MATOU K,et al. Microstructure statistics-property relations of silver particle-based interconnects[J]. Materials & Design,2017,118:304-313.
[22] YU Fang,CUI Jinzi,ZHOU Zhangming,et al. Reliability of Ag sintering for power semiconductor die attach in high temperature applications[J]. IEEE Transactions on Power Electronics,2017,32(9):7083-7095.
[23] SIOW K S. Mechanical properties of nano-silver joints as die attach materials[J]. Journal of Alloys & Compounds,2012,514:6-19.
[24] 邓钟炀,贾强,冯斌,等. 脉冲激光沉积高性能薄膜及其应用研究进展[J]. 中国激光,2021,48(8):0802010. DENG Zhongyang,JIA Qiang,FENG Bin,et al. Research progress on fabrication and applications of high-performance films by pulsed laser deposition[J]. Chinese Journal of Lasers,2021,48(8):0802010.
[25] SCHMITT W,CHEW L M,MILLER R. Pressure-less sintering on large dies using infrared radiation and optimized silver sinter paste[C]//2018 IEEE 68th Electronic Components and Technology Conference (ECTC),May 29-June 1,2018,Las Vegas,USA. New York:IEEE,2018:539-544.
[26] ZHANG Hongqiang,ZOU Guisheng,LIU Lei,et al. Low temperature sintering of silver nanoparticle paste for electronic packaging[C]//2016 International Conference on Electronics Packaging (ICEP),April 20-22,2016,Hokkaido,Japan. New York:IEEE,2016:314-317.
[27] ZHANG Hongqiang,WANG Wengan,BAI Hailin,et al. Microstructural and mechanical evolution of silver sintering die attach for SiC power devices during high temperature applications[J]. Journal of Alloys and Compounds,2019,774:487-494.
[28] HEUCK N,MVLLER S,PALM G,et al. Swelling phenomena in sintered silver die attach structures at high temperatures:Reliability problems and solutions for an operation above 350℃[C]//International Conference and Exhibition on High Temperature Electronics 2010,HiTEC 2010,2010:18-25.
[29] FENG Bin,SHEN Daozhi,WANG Wengan,et al. Cooperative bilayer of lattice-disordered nanoparticles as room-temperature sinterable nanoarchitecture for device integrations[J]. ACS Applied Materials & Interfaces,2019,11(18):16972-16980.
[30] ZUBIR N S M,ZHANG Hongqiang,ZOU Guisheng,et al. Large-area die-attachment sintered by organic-free Ag sintering material at low temperature[J]. Journal of Electronic Materials,2019,48:7562-7572.
[31] WANG Wengan,ZOU Guisheng,JIA Qiang,et al. Mechanical properties and microstructure of low temperature sintered joints using organic-free silver nanostructured film for die attachment of SiC power electronics[J]. Materials Science and Engineering A,2020,793:139894.
[32] JIA Qiang,ZOU Guisheng,WANG Wengan,et al. Sintering mechanism of a supersaturated Ag-Cu nanoalloy film for power electronic packaging[J]. ACS Applied Materials & Interfaces,2020,12(14):16743-16752.
[33] KIM M S,NISHIKAWA H. Effects of bonding temperature on microstructure,fracture behavior and joint strength of Ag nanoporous bonding for high temperature die attach[J]. Materials Science and Engineering A,2015,645:264-272.

纳米银微焊点阵列的超快激光图形化沉积及其芯片封装研究

Patterning Deposition of Nano-sliver Micro Bumps Array by Ultrafast Laser and Its Chip Packaging Research

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