关键词: 300 mm晶圆;抛光头;多区压力;超低压力;化学机械抛光, 高速铁路, 减载特性, 评价指标, 声屏障, 实验研究

Abstract: As the feature size scales down and the implementation of multilevel metallization, chemical mechanical polishing (CMP) has become one of the most important technologies in the ultra-large-scale integrated circuits manufacturing. However, the 300 mm wafer CMP tool is being increasingly monopolized by only a few foreign companies, and therefore the research level of 300 mm wafer CMP in our country is far behind other countries such as U.S., Japan, and South Korea. The critical technology of the 300 mm wafer CMP tool is studied. Firstly a 300 mm wafer multi-zone polishing head with pressure control system is developed, vacuum chuck and floating retainer ring are also available in the polishing head. And then the static and dynamic performance of the closed-loop pressure control system is tested. Finally a 300 mm wafer CMP tool is developed, and the 300 mm wafer CMP process flow is developed, improved, and optimized, which establishes the foundation for experimental research. The experimental results show that a material removal rate of 671.3 nm/min, and a within wafer non-uniformity of 3.93 % can be realized by the developed 300 mm wafer CMP tool.

Key words: 300 mm wafer;polishing head;multi-zone pressure;ultra-low downforce;chemical mechanical polishing