• CN:11-2187/TH
  • ISSN:0577-6686

›› 2013, Vol. 49 ›› Issue (5): 167-172.

• 论文 • 上一篇    下一篇

混合进化算法的Metropolis蒙特卡罗MEMS单晶硅湿法刻蚀工艺模型

王树桥;幸研;田秘;仇晓黎;齐建昌   

  1. 东南大学机械工程学院
  • 发布日期:2013-03-05

Hybrid Evolutionary–Metropolis Monte Carlo Algorithm for Wet Etching of Silicon MEMS Fabrication Process

WANG Shuqiao;XING Yan;TIAN Mi;QIU Xiaoli;QI Jianchang   

  1. School of Mechanical Engineering, Southeast University
  • Published:2013-03-05

摘要: 提出一种混合进化算法的Metropolis蒙特卡罗湿法刻蚀新工艺模型和改进的表面原子移除概率函数。依据单晶硅典型晶面的刻蚀速度,新工艺模型能够自动获得基于原子模型的蒙特卡罗法能量参数。改进的表面原子移除概率函数采用四指数的表面原子配置分类法,更加精确地描述刻蚀反应中表面结构的变化过程,增强了蒙特卡罗模型的仿真能力。在多种刻蚀系统,不同浓度和温度条件下的计算结果与试验数据对比表明,任意(h,k,l)晶面的各向异性刻蚀速度曲线能够与试验结果一致。与现有方法相比,新的移除概率函数能够表示刻蚀速度各向异性曲线在Si(100)和Si(110)临近晶面同时出现局部最小点的情形,并且计算精度显著提高。通过对三维微结构刻蚀过程的准确模拟,验证了Metropolis蒙特卡罗工艺模型的有效性。

关键词: Metropolis蒙特卡罗法, 单晶硅, 各向异性, 湿法刻蚀

Abstract: A novel hybrid evolutionary–Metropolis Monte Carlo method and a new form of removal probability function are proposed for the simulation of anisotropic wet etching process of silicon. Based on the etch rates of typical orientations, the new process model has the ability to calculate the energy parameters of the atomistic Monte Carlo method automatically. The modified removal probability function uses a four indices schema to classify the configuration of surface atoms, the process of changes in the structure of the surface of the etching reaction can be described more accurately, it improved the simulation ability of Monte Carlo model. The calculated etch rates of (h,k,l) orientations at different concentration and temperature in different etching conditions show good agreement with the experiment data. Comparing with the existing model, the new removal probability function can represent the anisotropy curve of etch rate with local minima at Si(100) and Si(110) vicinal planes with high accuracy. Finally, a simulation of micro structure fabrication processes is performed to validate the Metropolis Monte Carlo model in micro structure design.

Key words: Anisotropy, Metropolis Monte Carlo, Single crystal silicon, Wet etching

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