• CN:11-2187/TH
  • ISSN:0577-6686

›› 2012, Vol. 48 ›› Issue (7): 180-185.

• 论文 • 上一篇    下一篇

电化学机械平坦化抛光垫混合软弹流润滑行为数值研究

周平;郭东明;康仁科;金洙吉   

  1. 大连理工大学精密与特种加工教育部重点实验室
  • 发布日期:2012-04-05

Numerical Study on the Mixed Soft Elastohydrodynamic Lubrication Behavior of ECMP Pad

ZHOU Ping;GUO Dongming;KANG Renke;JIN Zhuji   

  1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology
  • Published:2012-04-05

摘要: 电化学机械平坦化(Electrochemical mechanical planarization, ECMP)技术被认为是最具发展潜力的低强度Cu/low-k表面低压力平坦化技术之一,抛光液流动和接触压力的分布是影响ECMP效率和精度的决定性因素。采用混合软弹流润滑模型研究带导电孔ECMP抛光垫表面的流动与接触行为。分析结果表明,对于所研究的抛光垫和晶圆位置关系,尽管宏观平均接触压力为6.895 kPa,但是真正影响Cu/low-k结构完整性的局部接触压力达到了近70 kPa。此外,导电孔的存在并不影响抛光液压力和接触压力的分布趋势,对晶圆的姿态影响也较小。因此,为了提高加ECMP加工效率和面型精度,一方面需要研究导电孔分布方式控制电化学反应速率,另一方面需要改进其他诸如抛光垫和抛光头的设计,提高接触压力的均匀性。所提出的关于ECMP抛光垫混合软弹流润滑行为研究方法和结论对ECMP技术的进一步发展具有指导意义。

关键词: 粗糙表面, 弹流润滑, 电化学机械平坦化

Abstract: Electrochemical mechanical planarization (ECMP) is considered as one of the most potential planarizaiton techniques for Cu/low-k surface with low strength, and the transport of the electrolyte solution and contact pressure distribution are the two dominated factors for improving efficiency and profile accuracy of ECMP. Mixed soft elastohydrodynamic lubrication model is used to simulate the flow and contact behaviors on the surface of ECMP pad with conducting hole. For the pad analyzed here, the results show that the local contact pressure, which directly affects the surface integrity of Cu/low-k structure, is around 70 kPa, although, the mean value is only 6.895 kPa. Moreover, from the results considering different position of the conducting holes, no significant differences are observed in the distribution of electrolyte solution pressure and contact pressure, the orientation of wafer is also without obvious change. Therefore, in order to improve the uniformity of the contact pressure and increase the machining efficiency and profile accuracy of ECMP, beside the research on the distribution of the conducting hole, the pad and wafer carrier also should be studied and improved further. The simulation approach of mixed soft elastohydrodynamic lubrication behavior of ECMP pad and the conclusion obtained here is helpful to the development of ECMP technique.

Key words: Elastohydrodynamic lubrication, Electrochemical mechanical planarization(ECMP), Rough surface

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