• CN:11-2187/TH
  • ISSN:0577-6686

机械工程学报 ›› 2025, Vol. 61 ›› Issue (23): 321-330.doi: 10.3901/JME.2025.23.321

• 制造工艺与装备 • 上一篇    

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二茂铁含量对SLS-CVR成形SiCnw/SiC吸波陶瓷性能的影响

方志强1,2,3, 张扬泽1,2,3, 吴甲民1,2,3,4, 毛琛1,2,3, 陈颖1,2   

  1. 1. 华中科技大学材料科学与工程学院 武汉 430074;
    2. 华中科技大学材料成形与模具技术全国重点实验室 武汉 430074;
    3. 增材制造陶瓷材料教育部工程研究中心 武汉 430074;
    4. 温州HUST 先进制造研究所微波通信材料与设备重点实验室 温州 325035
  • 收稿日期:2025-02-20 修回日期:2025-05-23 发布日期:2026-01-22
  • 作者简介:方志强,男,1999 年出生。主要研究方向为吸波陶瓷的3D打印方法。E-mail:fffangzhiqiang@gmail.com
    吴甲民(通信作者),男,1984 年出生,博士,教授,博士研究生导师。主要研究方向为陶瓷增材制造及其应用。E-mail:jiaminwu@hust.edu.cn
  • 基金资助:
    国防科技大学新型陶瓷纤维及其复合材料重点实验室基金(6142907230301);中央高校基本科研业务费专项资金(15882024XCZX002,2024JCYJ068)资助项目

Effect of Ferrocene Content on the Properties of SLS-CVR Formed SiCnw/SiC Absorbing Ceramics

FANG Zhiqiang1,2,3, ZHANG Yangze1,2,3, WU Jiamin1,2,3,4, MAO Chen1,2,3, CHEN Ying1,2   

  1. 1. School of Materials Science and Engineering, Huazhong University of Science of Technology, Wuhan 430074;
    2. State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074;
    3. Engineering Research Center of Ceramic Materials for Additive Manufacturing of Ministry of Education, Wuhan 430074;
    4. Microwave Communication Materials and Devices Laboratory, WZ AMI of HUST, Wenzhou 325025
  • Received:2025-02-20 Revised:2025-05-23 Published:2026-01-22

摘要: 陶瓷基吸波材料由于其优良的化学稳定性、高温稳定性和较低的密度在提升武器装备隐身性能和解决电磁污染等问题上的重要地位日渐凸显。然而,传统的吸波涂层受限于设计维度和制备方法的局限性,不能兼顾结构-性能一体化的多样化需求。通过激光选区烧结(Selective laser sintering,SLS)技术辅以化学气相反应法(Chemical vapor reaction,CVR)引入原位自生SiC纳米线(SiCnw),能够制备出综合性能良好的SiCnw/SiC吸波陶瓷。研究表明,当二茂铁质量分数为1时,试样的介电常数实部(ε′)提高,介电常数虚部(ε′′)出现了两个显著的共振峰,最小反射损耗(RL)在试样厚度3.4 mm,电磁波频率8.94 GHz时取得为?40.60 dB,最大有效吸波带宽(EAB)为13.53 GHz。本研究为结构-吸波一体化SiCnw/SiC吸波陶瓷吸波陶瓷的增材制造提供了新的思路。

关键词: SiC 吸波陶瓷, 激光选区烧结, 化学气相反应法, 碳化硅纳米线, 吸波性能

Abstract: The importance of ceramic-based absorbing materials in enhancing the stealth performance of weaponry and addressing electromagnetic pollution issues is increasingly highlighted due to their excellent chemical stability, high-temperature stability, and low density. However, traditional absorbing coatings are limited in their ability to meet diverse demands for integrated structure-performance due to constraints in design dimensions and preparation methods. Selective laser sintering (SLS) technology can prepare SiC green parts and introduced in-situ grown SiC nanowire (SiCnw) through chemical vapor reaction (CVR) to prepare highly designable and comprehensively SiCnw/SiC absorbing ceramics. When the addition of ferrocene is 1wt%, the real part of dielectric constant (ε') of the sample is increased, and two significant formants of the imaginary part of dielectric constant(ε'') appeared. The minimum reflection loss(RL) is ?40.60 dB when the thickness of the sample is 3.4 mm and the electromagnetic wave frequency is 8.94 GHz, and the maximum effective absorption bandwidth(EAB) is 13.53 GHz. This study provides a new idea for theadditive manufacturing of structure-absorbing integrated SiCnw/SiC absorbing ceramics.

Key words: SiC absorbing ceramics, selective laser sintering, chemical vapor reaction, silicon carbide nanowire, absorbing performance

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