• CN:11-2187/TH
  • ISSN:0577-6686

›› 2010, Vol. 46 ›› Issue (22): 84-89.

• 论文 • 上一篇    下一篇

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单晶铜键合丝制备过程中的断线研究

曹军;丁雨田;曹文辉   

  1. 兰州理工大学甘肃省有色金属新材料省部共建国家重点实验室
  • 发布日期:2010-11-20

Research of Break Line in Single Crystal Copper Bonding Wire Drawing

CAO Jun;DING Yutian;CAO Wenhui   

  1. State Key Laboratory of Gansu Advanced Nonferrous Materials, Lanzhou University of Technology
  • Published:2010-11-20

摘要: 利用扫描电镜、X射线能谱仪对单晶铜线材拉制超微细键合丝的断口形貌、成分进行研究,分析单晶铜线材拉制过程中的断线类型及其影响因素。结果表明:单晶铜键合丝拉制过程中的断线主要由于单晶铜线材中高质量分数的O、S等气体元素形成氧化物偏聚,高质量分数的有害杂质元素(Al、Ca、Si等)及其形成的金属间化合物,内部缺陷(微小气孔、微小气孔及其杂质、组织不均匀等)引起的孔洞或局部应力集中造成;单晶铜线材的表面缺陷(起皮、毛刺、擦伤等)及其微小的氧化物夹杂对拉制过程中的突发性断线有决定性影响;同时由于单晶铜加工硬化现象明显,拉制过程中拉伸张力控制不当及其骤然变化引起线材的局部应力变化造成拉制过程中的断线。

关键词: 单晶铜, 断线, 键合丝, 拉制

Abstract: The fracture surface and composition of single crystal copper fine bonding wire are inspected by scanning electron microscopy(SEM) and X-ray energy dispersive spectrometer(EDS), and the broken type and its influencing factors in single crystal copper wire drawing are analyzed. The results show that the breaking of fine single crystal copper bonding wire in drawing process is mainly caused by the oxide segregation formed by high-concentration gas elements O and S, the high mass fraction of harmful impurity elements(Al, Ca, Si, etc) and the intermetallic compounds formed thereby, the holes caused by internal defects(micro-pores and impurities, non-uniform microstructures) or local stress concentration in single crystal copper. The surface defects(peeling, burrs, scratches, etc) and micro-oxide impurities have decisive influence to the sudden wire breaking in the drawing process. The phenomenon of hardening of single crystal copper is obviously, the local stress concentration caused by improper tension control and its abrupt change lead to the wire breaking in the drawing process.

Key words: Bonding wire, Drawing, Single crystal copper, Wire breaking

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