Abstract: Chemical-mechanical polishing (CMP) is widely used in planarization of silicon substrate and multilayer metal interconnection construction and becomes one of core technologies in ULSI fabrication. However, the traditional CMP technology has some disadvantages and limitations. It is important to research and develop new planarization technology while improving the traditional CMP technology. Based on analyse of the traditional CMP technology, principle and advantages of several new wafer planarization technology, such as fixed abrasives CMP, abrasive-free CMP, electrochemical mechanical planarization, stress-free polishing, contact planarization, plasma assisted chemical etching, are introduced，and future developments on wafer planarization technology are predicted.

Key words: Chemical-mechanical polishing, IC, Planarization, Wafer