• CN:11-2187/TH
  • ISSN:0577-6686

机械工程学报 ›› 2016, Vol. 52 ›› Issue (17): 86-93.doi: 10.3901/JME.2016.17.086

• 精密加工制造技术专栏 • 上一篇    下一篇

工件旋转法磨削硅片的磨粒切削深度模型*

高尚, 王紫光, 康仁科, 董志刚, 张璧   

  1. 大连理工大学精密与特种加工教育部重点实验室 大连 116024
  • 出版日期:2016-09-05 发布日期:2016-09-05
  • 作者简介:高尚,男,1982年出生,博士,讲师。主要研究方向为硬脆材料的精密与超精密加工技术。

    E-mail:gaoshangf@gmail.com

    康仁科(通信作者),男,1962年出生,博士,教授,博士研究生导师。主要研究方向为超精密加工与特种加工技术、难加工材料高效加工技术、半导体制造技术与设备。

    E-mail:kangrk@dlut.edu.cn

  • 基金资助:
    * 国家自然科学创新研究群体(51321004)、国家自然科学基金重大研究计划集成项目(91023019)、国家自然科学基金青年科学基金(51505063)和辽宁省教育厅科学研究(L2014015)资助项目; 20150911收到初稿,20160422收到修改稿;

Model of Grain Depth of Cut in Wafer Rotation Grinding Method for Silicon Wafers

GAO Shang, WANG Ziguang, KANG Renke, DONG Zhigang, ZHANG Bi   

  1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024
  • Online:2016-09-05 Published:2016-09-05

摘要:

半导体器件制造中,工件旋转法磨削是大尺寸硅片正面平坦化加工和背面薄化加工最广泛应用的加工方法。磨粒切削深度是反映磨削条件综合作用的磨削参量,其大小直接影响磨削工件的表面/亚表面质量,研究工件旋转法磨削的磨粒切削深度模型对于实现硅片高效率高质量磨削加工具有重要的指导意义。通过分析工件旋转法磨削过程中砂轮、磨粒和硅片之间的相对运动,建立磨粒切削深度模型,得到磨粒切削深度与砂轮直径和齿宽、加工参数以及工件表面作用位置间的数学关系。根据推导的磨粒切削深度公式,进一步研究工件旋转法磨削硅片时产生的亚表面损伤沿工件半径方向的变化趋势以及加工条件对磨削硅片亚表面损伤的影响规律,并进行试验验证。结果表明,工件旋转法磨削硅片的亚表面损伤深度沿硅片半径方向从边缘到中心逐渐减小,随着砂轮磨粒粒径、砂轮进给速度、工件转速的增大和砂轮转速的减小,加工硅片的亚表面损伤也随之变大,试验结果与模型分析结果一致。

关键词: 磨粒切削深度, 磨削, 亚表面损伤, 硅片

Abstract:

During the integrated circuit manufacturing process, ultra-precision grinding based on the principle of wafer rotation grinding is currently utilized as a major method in flattening and back-thinning of large-size silicon wafers. Grain depth of cut is a function to characterize the overall grinding conditions and has direct effect on the surface/subsurface quality of ground workpieces. Modelling of grain depth of cut of workpiece rotation grinding has great significance in grinding of silicon wafers with high efficiency and high surface layer quality. Based on the analysis of relative motion between cup-type grinding wheel, abrasives and silicon water in wafer rotation grinding, the model of grain depth of cut is proposed and the mathematical relationship among grain depth of cut, dimensions of cup-type grinding wheel, grinding parameters and radical distance is presented. With the proposed model, the subsurface damage distributions along the radical direction of ground silicon wafers and the effects of machining conditions on subsurface damage in wafer rotation grinding are then analyzed, and the grinding experiments are conducted to verify the model. The experiment results show that the subsurface damage depth decreases gradually along radical direction from edge to centre of the ground wafer surface. The subsurface damage depth increases with the increase in wheel grain size, wafer rotation speed, wheel feedrate and the decrease in wheel rotation speed. The experiment results agree well with the model predictions.

Key words: grain depth of cut, grinding, subsurface damage, silicon wafers