• CN:11-2187/TH
  • ISSN:0577-6686

›› 2014, Vol. 50 ›› Issue (1): 205-212.

• 论文 • 上一篇    

集群磁流变平面抛光加工技术

潘继生;阎秋生;路家斌;徐西鹏;陈森凯   

  1. 广东工业大学机电工程学院;华侨大学脆性材料加工技术教育部工程研究中心
  • 发布日期:2014-01-05

Cluster Magnetorheological Effect Plane Polishing Technology

PAN Jisheng;YAN Qiusheng;LU Jiabin;XU Xipeng; CHEN Senkai   

  1. School of Electromechanical Engineering, Guangdong University of Technology Engineering Research Center for Brittle Materials Machining, Huaqiao University
  • Published:2014-01-05

摘要: 基于磁流变效应和集群原理提出集群磁流变效应平面抛光技术,对磁极排布方式、端面形状及其尺寸的磁场特性进行静磁场有限元分析优化,结果表明,选取圆柱平底磁极进行同向规律排布时容易形成由多个独立“微磨头”组成的柔性抛光膜,能实现加工表面与“微磨头”的实际接触面积最大化。通过设置“微磨头”尺寸及数量与工件的接触状态,对K9玻璃、单晶硅和单晶6H-SiC三种硬脆材料基片加工出弧形抛光带,试验验证集群磁流变效应抛光膜的集群特性。对加工表面与抛光盘表面之间的间隙、加工时间、磁感应强度和转速等集群磁流变平面抛光工艺参数进行试验优化,并采取优化工艺对三种硬脆材料进行30 min抛光,K9玻璃表面粗糙度从Ra 0.34 μm下降到Ra 1.4 nm,单晶硅从Ra 57.2 nm下降到Ra 4 nm,单晶SiC从Ra 72.89 nm下降到Ra 1.92 nm,均能获得纳米级粗糙度表面。

关键词: 集群磁流变效应;平面抛光;磨粒半固着;表面粗糙度;硬脆材料

Abstract: Base on magnetorheological effect and cluster principle, the cluster magnetorheological effect plane polishing technology is proposed. The magnetic field characteristics of pole arrangement, the pole tip shape and different magnetic pole size are analysed by static magnetic field finite element software. It is found that soft polishing pad is more easily composed of multiple independent micro grinding head by select cylindrical flat bottom magnetic pole and arrange in the same direction, then the contact area of workpiece and micro grinding head maximization can be realized. By setting the contact state between the workpiece and the micro grinding head size and number, arc polish belt of K9 glass, single crysta silicon wafers and single crystal 6H-SiC wafers are polished for testing and verifying the cluster characteristics of micro grinding head. Optimization experiments are conducted to optimize the machining gap between the workpiece and the polishing disc surface, polishing time, the magnetic field strength of disk end and speed. By polishing K9 glass, single crysta silicon wafers and single crystal 6H-SiC wafers with the optimized parameters, nanoscale roughness surface are obtained in 30 min. The surface roughness of K9 glass, single crysta silicon wafers and single crystal SiC can be reduced from Ra 0.34 μm to Ra 1.4 nm, Ra 57.2 nm to Ra 4 nm and Ra 72.89 nm to Ra 1.92 nm, respectively.

Key words: cluster magnetorheological effect;plane polishing;semi-fixed abrasive;surface roughness;hard and fragile materials

中图分类号: