• CN:11-2187/TH
  • ISSN:0577-6686

›› 2009, Vol. 45 ›› Issue (3): 156-161.

• 论文 • 上一篇    下一篇

基于非硅衬底的微机电系统惯性开关的研制

蔡豪刚;杨卓青;丁桂甫;刘瑞   

  1. 上海交通大学微纳科学技术研究院
  • 发布日期:2009-03-15

Development of a MEMS Electrical Inertia Micro-switch Based on Non-silicon Substrate

CAI Haogang;YANG Zhuoqing;DING Guifu;LIU Rui   

  1. Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University
  • Published:2009-03-15

摘要: 以非硅表面微加工技术为基础,在玻璃衬底上设计和制造一种简单可靠并有反向冲击保护的单向一次触发微机电系统(Micro electro-mechanical system,MEMS)惯性电学开关。该设计采用连体蛇形弹簧将可动电极(质量块)悬空固定,用挡块作为反向冲击保护,其敏感方向为平行于衬底面的水平方向,整个器件使用成本较低而又方便的叠层电镀镍工艺制作。通过对弹簧-质量块系统运动过程的理论分析和有限元仿真,研究器件阈值加速度与其质量块厚度的关系,并用落锤试验对封装器件的阈值加速度以及峰值为100g(g=9.8 m/s2)半正弦冲击下的响应进行了测试,得到该微开关的阈值加速度分布在58g~72g,基本符合预期设计的60g阈值加速度要求,响应时间约为10–4 s量级,与有限元仿真结果吻合较好。

关键词: 仿真, 非硅表面微加工, 惯性开关, 微机电系统, 阈值加速度

Abstract: Based on non-silicon surface micromachining technology, a simple but reliable micro electro-mechanical system (MEMS) electrical inertia micro-switch with single sensitive direction and reverse impact protection is designed and fabricated on glass substrate. In this design, conjoined serpentine springs are used to fix and suspend the mobile electrode (mass) and blocks are used to protect the device against reverse impulse. The switch is laterally driven (i.e. its sensitive direction is parallel to the substrate). Fabrication is carried out by low-cost and convenient multi-layer electroplating technology. The relationship between threshold acceleration and mass thickness has been investigated by theoretical analysis and finite element analysis (FEA) simulation. After fabrication and packaging, micro-switches are tested by using drop weight. The results show that the threshold accelerations distribute between 58g and 72g, which basically fulfils the expected 60g; and the response time to 100g half-sine waved shock is in the order of 10–4 s, which is in agreement with simulation result.

Key words: Inertia micro-switch, Micro electro-mechanical system, Non-silicon surface micromachining, Simulation, Threshold acceleration

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