• CN:11-2187/TH
  • ISSN:0577-6686

机械工程学报 ›› 2026, Vol. 62 ›› Issue (2): 115-130.doi: 10.3901/JME.260041

• 材料科学与工程 • 上一篇    

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功率器件封装用铜烧结应用挑战与研究进展

朱睿康1, 贾强1,2, 王乙舒1, 张宏强3, 马立民1, 邹贵生4, 郭福1,5   

  1. 1. 北京工业大学材料科学与工程学院 北京 100124;
    2. 北京工业大学重庆研究院 重庆 400015;
    3. 北京航空航天大学机械工程及自动化学院 北京 100191;
    4. 清华大学机械工程系 北京 100084;
    5. 北京信息科技大学机电工程学院 北京 100192
  • 收稿日期:2024-11-04 修回日期:2025-06-15 发布日期:2026-03-02
  • 作者简介:朱睿康,男,2001年出生。主要研究方向为第三代半导体封装材料和烧结铜接头及其可靠性。E-mail:13161060368@163.com;贾强,男,1991年出生,博士,教授,博士研究生导师。主要研究方向为第三代半导体封装材料与装备、车规级功率器件封装及可靠性。E-mail:jiaqiang@bjut.edu.cn
  • 基金资助:
    重庆市自然科学基金面上(CSTB2023NSCQ-MSX0187),国家自然科学基金(52205324),北京市科技计划(Z231100006023012)资助项目。

Application Challenges and Research Progress of Copper Sintering for Power Module Packaging

ZHU Ruikang1, JIA Qiang1,2, WANG Yishu1, ZHANG Hongqiang3, MA Limin1, ZOU Guisheng4, GUO Fu1,5   

  1. 1. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124;
    2. Chongqing Research Institute, Beijing University of Technology, Chongqing 400015;
    3. School of Mechanical Engineering and Automation, Beihang University, Beijing 100191;
    4. Department of Mechanical Engineering, Tsinghua University, Beijing 100084;
    5. School of Mechanical Electrical Engineering, Beijing Information Science and Technology University, Beijing 100192
  • Received:2024-11-04 Revised:2025-06-15 Published:2026-03-02

摘要: 第三代半导体由于其优异的性能以及更高的理论运行温度在功率器件上得到了广泛应用,对芯片连接层材料也提出了高温服役以及高可靠性等严苛要求,传统的封装材料已经难以满足使用需求。铜烧结被认为是未来封装材料的潜力选择之一,但在应用中面临铜颗粒及铜膏储存不稳定、烧结与服役过程易于氧化等诸多问题和挑战。针对纳米铜烧结当前面临的应用挑战的现有解决方案,从纳米铜颗粒制备及烧结型铜膏的有机物选择、颗粒结构设计及烧结气氛选择三个方面进行了综述,论述了不同策略下避免铜烧结氧化的效果、机理、局限性及未来应用前景,重点分析了三种防氧化手段在铜烧结应用各环节起到的作用及其各自优势与局限性,以及不同手段在铜烧结全流程中的协同作用,旨在促进铜烧结技术应对氧化问题的挑战,加速其在Si C芯片等高性能、高功率器件封装上的应用。

关键词: 第三代半导体, 铜烧结, 抗氧化, 高温可靠

Abstract: Benefit by its excellent performance and higher theoretical operating temperature, the third-generation semiconductor has been widely used in power devices, and the chip connection layer materials have also put forward strict requirements such as high temperature service and high reliability, and traditional packaging materials have been difficult to meet the needs of use. Because of its excellent electrical and thermal conductivity and good service reliability of its sintered joints, nano-copper is considered to be one of the potential options for packaging materials in the future, but it faces many problems and challenges in application, such as immature particle preparation technology, unstable storage of copper paste, and easy oxidation during sintering and service. The existing solutions to the application challenges currently faced by nano-copper sintering has been reviewed from three aspects:the preparation of nano-copper particles and the selection of organic substances in sintering-type copper pastes, the design of particle structure and the selection of sintering atmosphere. It discusses the effects, mechanisms, limitations and future application prospects of different strategies in avoiding oxidation during copper sintering. It focuses on analyzing the roles, advantages and limitations of three anti-oxidation methods in each stage of copper sintering application, as well as their synergistic effects in the entire copper sintering process. The aim is to promote the copper sintering technology to meet the challenges of oxidation and accelerate its application in the packaging of high-performance and high-power modules such as SiC chips.

Key words: the third generation semiconductor, sintered copper, anti-oxidation, high-temperature reliability

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