Characterization and Measurement of Elastic Modulus Based on Ultrasonic Atomic Force Microscopy for Nano-porous Silicon Oxide Film

doi:10.3901/JME.2018.12.109

Abstract

Abstract: Nano-porous silicon oxide film with low dielectric constant, compositing with aluminum can greatly reduce the resistance loss, it is the most promising of the new generation of low dielectric material. In nano-electronics, the mechanical properties of the low dielectric film can be controlled by its porosity and pore size. The elastic modulus is a required parameter in device designs. However, the traditional methods can not characterize the elastic modulus at the nano-scale. Herein, using plasma enhanced chemical vapor deposition (PECVD) method, hexamethyldisiloxane (HMDSO) is as monomer and oxygen as a reaction gas, meanwhile a small amount of organic material is added, the silicon oxide film is deposited on the glass substrate surface with glow discharge plasma, then the film is heat-treated at a high temperature, so organic components such hydrogen bonds are removed and the pores are formed (hereafter refer to nano-porous silicon oxide film) to reduce the dielectric constant. The results show that the refractive index of the silicon oxide film is reduced with heat treatment, wherein when the discharge power is 100 W, ratio of oxygen to monomer is 1:4, the discharge time is 10min, the refractive index of the film is minimized after the heat treatment, the dielectric constant is 1.885. At the same time, using ultrasonic atomic force microscopy system (UAFM) the elastic modulus of the nano-porous silicon oxide film is tested with non-destructive. Silicon oxide nano-film as a reference sample, elastic properties silicon oxide films with heat-treated is detected experimentally. Indentation modulus of silicon oxide nano-film after heat treatment is 35.24 GPa. Comparing to the silicon oxide nano-film with 78.8 GPa indentation modulus, it reduces 42.94 GPa for nano-porous silicon oxide film.

Key words: elastic modulus, plasma enhanced chemical vapor deposition (PECVD), porous silicon oxide film, reference method, ultrasonic atomic force microscopy

CLC Number:

TG156

ZHANG Gaimei, WANG Can, SONG Xiaoli, HE Cunfu, CHEN Qiang. Characterization and Measurement of Elastic Modulus Based on Ultrasonic Atomic Force Microscopy for Nano-porous Silicon Oxide Film[J]. Journal of Mechanical Engineering, 2018, 54(12): 109-114.

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