Abstract: Through analyzing optical Lithography，which is the core of the integrated circuit manufacturing technique, imprint lithography based on mechanical micro-replicating technique can avoid the diffracting limitation of traditional optical lithography and has the ability to replicate pattern with 6 nm feature sizes. Based on analyzing the imprint lithography fundamental, the process characteristic, imprint area, mould structure, and resist curing process during hot embossing and imprint lithography in room temperature processes is compared in detail and it can be proved that the imprint lithography in room temperature is well match to the pattern transfer of multi-layers lithography. Through analyzing the key techniques of ultra violet curing imprint lithography in room temperature, the control of filming resist, alignment, overlay lithography, precise load, residual resist control, and resist curing control, a novel imprint process-distortion reduction by precure press releasing is established, which can realize pattern transfer of sub-100 nm feature sizes in large area field. In the end, the structure properties of SIL-I imprint tool is deeply discussed, whose precision level is calculated, and by analyzing the results of several imprint experiments the replicating accuracy of imprint lithography is also evaluated .

Key words: Imprint, Integrated circuit, Lithography, Next generation lithographg (NGL)