Experimental Study on Friction-induced Chemical-mechanical Composite Machining (FCMM) of 4H-SiC Single Crystal

doi:10.3901/JME.2024.07.401

Abstract

Abstract: Single crystal silicon carbide (SiC) has become the preferred substrate for the next generation power electronic devices and optoelectronic devices due to its excellent material properties. However, the high hardness and brittleness of SiC and the enhanced chemical inertness have brought great challenges to its efficient precision machining. A new machining idea of SiC wafer based on the combination of friction induced chemical action and low hardness abrasive mechanical action was proposed. The material removal rate of 4H-SiC was tracked with time in different iron base sintered disks and different processing parameters. The surface quality and sub-surface damage of the fabricated wafer were measured. The experimental results show that the solid chemical reaction between metal and SiC can be achieved by friction induction and the solid chemical reaction product can be removed by low hardness abrasive. No crystal deformation and lattice defects were observed in the processed subsurface at nanometer scale. The maximum material removal rate in the initial processing stage is 1 025 nm/min, and the maximum material removal rate in the stable stage is 385 nm/min. The process parameters have an important effect on the chemical reaction rate of solid phase in the process of processing. The low hardness abrasive can achieve mechanical removal of chemical reaction adhesion, which can effectively improve the material removal rate. The experimental results confirm the feasibility of the new machining idea proposed in this paper, and the overall machining efficiency is significantly higher than the existing machining methods, which provides a new research idea for realizing the high efficiency and precision machining of single crystal SiC wafers.

Key words: friction-induced, solid-phase chemical reaction, chemical-mechanical composite machine, SiC, subsurface damage

CLC Number:

TH161

ZHANG Bonan, HUANG Hui, WU Min. Experimental Study on Friction-induced Chemical-mechanical Composite Machining (FCMM) of 4H-SiC Single Crystal[J]. Journal of Mechanical Engineering, 2024, 60(7): 401-410.

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