The Material Removal Mechanism of Monocrystal SiC Scratching by Single Diamond Grit with Different Tip Radius

doi:10.3901/JME.2017.15.171

Abstract

Abstract: To achieve the ductile processing of monocrystalline carbide, the scratching experiments for monocrystalline silicon are carried out with diamond grits in different tip radius. Based on the experiment results, the brittle-ductile transition of single monocrystalline silicon carbide on scratching with a cone-shaped diamond grain in different tip radius is simulated by the method of coupling FEM and SPH. The simulation results are found to be basically in conformance with the results of the experiment. The influence of brittle-ductile transition on three different tip radius are discussed. The results show that the grinding process of monocrystalline silicon carbide can be divided into three stages-flexible and plastic processing, brittle-ductile transition processing, brittle processing. With the increase of tip radius, the critical depth from elastic-plastic deformation to ductile-brittle transition tends to be 0.14 microns, and pure plastic deformation mode gradually disappears. The region of ductile-brittle transition become longer, and the critical depth of ductile-brittle transition to brittleness removal mode are deeper. The length and thickness of micro crack in ductile-brittle transition increase gradually, and the form of material damage also gradually upgrade.

Key words: brittle-ductile transition, material removal mode, monocrystalline silicon carbide, single diamond grain scratching

CLC Number:

TG501

DUAN Nian, HUANG Shengui, YU Yiqing, HUANG Hui, XU Xipeng. The Material Removal Mechanism of Monocrystal SiC Scratching by Single Diamond Grit with Different Tip Radius[J]. Journal of Mechanical Engineering, 2017, 53(15): 171-180.

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