Abstract: The Monte Carlo (MC) method is explored to simulate the composed silicon fabrication processes of anisotropic wet etching. The multi-step etching processes with multiple masking capabilities are implemented in the simulation program. The removal probability function is applied to calculating the parameters of removal probabilities in the MC calculation. This approach can simulate the effects of silicon oxide and silicon nitride layers in wet anisotropic etching and the transformation of the multi-mask patterns. The simulation of the six steps processes for atomic force microscope (AFM) probe array is carried out to verify this MC method.

Key words: Single crystal silicon, Anisotropic wet chemical etching, Monte Carlo method, Simulation