Abstract: Due to the conflict between the imprint area and the parallelity of mould and wafer, the elastometric imprint lithography is described. The loading process and the key technology of this process are analyzed and the error factors during pattern transferring process are also mined. Through comparing among the loading process factors, the conflict between the pattern transferring accuracy and residual resist thickness is indicated. By adjusting the elastic restore step before the UV-cure step, a novel imprint process-DRPPR, distortion reduction by precure press releasing is established and the inner conflict can be eliminated, and the imprint area can be lifted from 2 cm2 to 8 cm2. Based on the novel imprint lithography process, a low cost and simple structure prototype machine of step imprint lithography is designed and fabricated, and a series of imprint experiments show that the new imprint process can meet the needs for different pressing areas, feature sizes and repetitious imprints.

Key words: Distortion reduction by precure press releasing (DRPPR), Elastometric imprint lithography, Elastometric mould