ANALYSIS AND  COMPENSATION OF PROXIMITY EFFECT IN MEMS WITH E-BEAM LITHOGRAPHY

›› 2004, Vol. 40 ›› Issue (9): 67-70.

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ANALYSIS AND COMPENSATION OF PROXIMITY EFFECT IN MEMS WITH E-BEAM LITHOGRAPHY

Yin Ming;Zhang Yulin;Cheng Jianhui

School of Control Science and Engineering, Shandong University School of Mechanical Engineering,Shandong University

Published:2004-09-15

Abstract

Abstract: E-beam irradiation changes the molecular weight of the resist by inducing chemical changes in the film，which leads to the undesired exposure-area and desired area non-uni- form．This is commonly called as “proximity effect”．The proximity effect in the SDS-3 E-beam lithography system is verified by experiments．All exposures are made with 5～30 kV beam accelerating in Si and PMMA resist．After correction parameter h is of low 30% and giving pictures of experiment.

Key words: Correction, Distortion, MEMS, Optimal state, Proximity effect

CLC Number:

TH116

Yin Ming;Zhang Yulin;Cheng Jianhui. ANALYSIS AND COMPENSATION OF PROXIMITY EFFECT IN MEMS WITH E-BEAM LITHOGRAPHY[J]. , 2004, 40(9): 67-70.

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ANALYSIS AND COMPENSATION OF PROXIMITY EFFECT IN MEMS WITH E-BEAM LITHOGRAPHY

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