Abstract: Graphite crystales were grown in the melts of Fe-C, Fe-C-S and Fe-C-S-Ce alloys, with pyrolytic graphite as the seed. The microstructure of the layers between the epitaxially grown plane and the (0001)an:d (1010) crystal planes were studied "The orientation of the (0001) crystal plane :was determined by means of ionetching techniques and the surface of the epitagial layer was investigated by topography and x-ray diffraction analysis. A new result regarding the growth mechanism of graphite in Fe-C alloy has been obtained, which supports the model propsed earlier by the authors.In this paper it is remarked that the rate of growth for both (0001) and (1010) graphite crystals are nearly the same .when there is no interference: from activated elements such as S,o etc. However, the forms of their growth Fare different: Growth in the (0001) direction is spiral,whereas growth in the (1010) is in the form of flat dendritic crystals,and some crystals even change their growth into the (0001) direction. Interference from S, blocked some of the (0001) plane spiral crystals and other spiral crystals grew tilted and staggered. Growth based on the (1010) plasne is unstable because of blocking. Action from Sand most of them change their growth direction to that of the :twin -crystal plane. The spheroidisation effect of Ce is to combine with the S and O- as a consequence restraining them both.It has also been found that after adding rapid splitting and spiral` growth of crystals based on the (0001) plane occurs like a bunch of crystals tilted at a small angle with one another In the course of growth these crystals progressively change their orientation thus becoming spherical. The crystal plane (1010) is restrained on addition of Ce and changes its orientation immediately .This also leads to spherical growth.