Solid Catalysts Based on Fenton Reaction for SiC Wafer in Chemical Mechanical Polishing

doi:10.3901/JME.2017.21.167

Abstract

Abstract: Aiming at the CMP solution of single crystal SiC, the catalytic efficiency of Fe-based solid catalysts such as Fe, FeO, Fe₂O₃ and Fe₃O₄ are studied. When Fe₃O₄ is used as the catalyst of Fenton reaction, an obviously chemical reaction happens on the surface of SiC and a relatively soft SiO₂ layer which is easier to be removed is generated, and the highest material removal rate which is 17.2 mg/h and the minimum surface roughness which is R_a2.5 nm are obtained after chemical mechanical polishing. Fe₃O₄ is more appropriate for CMP of SiC compared with other solid catalysts such as Fe, FeO and Fe₂O₃. The concentration and stability of Fe²⁺ in chemical polishing solution are crucial factors deciding the rate and stability of Fenton reaction, and the concentration of Fe²⁺ is directly affected by the ability of ionizing free Fe²⁺ of solid catalyst. The stronger the ability of ionizing free Fe²⁺ of solid catalyst is, the higher the concentration of Fe²⁺ in polishing solution will be, and then the faster the rate of Fenton reaction will be. In this case, a higher material removal rate and a better polishing quality of SiC will be obtained in CMP.

Key words: chemical mechanical polishing, Fenton reaction, removal efficiency, SiC, solid catalyst

CLC Number:

TH161

XU Shaoping, LU Jiabin, YAN Qiusheng, SONG Tao, PAN Jisheng. Solid Catalysts Based on Fenton Reaction for SiC Wafer in Chemical Mechanical Polishing[J]. Journal of Mechanical Engineering, 2017, 53(21): 167-173.

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