Optimization of Residual Stress in AlN-Cu Brazing Joint Based on Heterogeneous Interlayer

doi:10.3901/JME.2025.08.098

Abstract

Abstract: Insulated Gate Bipolar Transistor (IGBT) is a core device for energy conversion and transmission. Due to excessive residual stress, the connection of the substrate becomes an urgent problem to the application of the device. Aiming at AlN-Cu substrates, this study used embedded interwoven metal wires in the joint to reduce residual stress. Such stress-relaxing effect was systematically studied with mechanical tests, finite element simulations and principle of mechanics. The results showed that the distance between the metal wire and the weld edge is the key parameter for structure optimization while the number of wires has little impact. Besides, a prestress effect was identified, which can be used to determine the optimal wire placement position from stress distribution of non-wire brazing structure. This wire-embedding structure has increased the shear strength of AlN-Cu joint up to 245 MPa, which is 37.6% higher than that of non-wire structures. Providing a simple and effective solution for the residual stress control of IGBT substrates.

Key words: AlN-Cu joint, brazing, prestress effect, optimization

CLC Number:

TG407

WANG Dada, XU Haitao, LIU Ping, JIN Xia, Lü Chuanyang, HE Yanming. Optimization of Residual Stress in AlN-Cu Brazing Joint Based on Heterogeneous Interlayer[J]. Journal of Mechanical Engineering, 2025, 61(8): 98-106.

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