Advances in Metallurgical Behavior of Micro/nano-scale Cu-Sn Interface

doi:10.3901/JME.2022.02.223

Abstract

Abstract: With the higher-density integration and greater functionality of electronic chips, the performance requirements for chip micro-interconnection structures are getting higher and higher. The three-dimensional package interconnection structure is one of the critical technologies to achieve the systematic integration between multiple chips, and the micro/nano-scale Cu-Sn interconnect structure is considered to be an important development direction of the three-dimensional package interconnect structure. The focuses on the dynamic behavior of solder joint interfacial reactions in electronic packaging technology which are of wide interest. Growth of Cu₆Sn₅ at the solid-liquid interface; Layer-type growth of IMC in solid-state aging at the Cu-Sn interface; Growth kinetics of porous-type Cu₃Sn in μ-bumps; 1μm pillar-type growth of Cu-Sn IMCs; Interfacial kinetics of one-dimensional Cu/Sn nanowires. Further, with the reduction of interconnection structure size, the metallurgical behavior of Cu-Sn, such as nano-scale intermetallic compound sintering connection, was also constantly being studied. Finally, according to the research progress in the field of the metallurgical behavior of the micro/nano-scale Cu-Sn interface in recent years, this paper comprehensively reviews the challenges and prospects in this field. The purpose is to clarify the dominant mechanism of size effect the metallurgical behavior of Cu-Sn interface,and provide the important implications for high quality interconnection of 3D Integrated circuit.

Key words: three-dimensional package, interconnect structure, micro/nano scale, Cu-Sn interface, dynamic behavior

CLC Number:

TG425

CHEN Jieshi, WANG Jianing, ZHANG Zhiyuan, ZHANG Peilei, YU Zhishui, YU Chun, LU Hao. Advances in Metallurgical Behavior of Micro/nano-scale Cu-Sn Interface[J]. Journal of Mechanical Engineering, 2022, 58(2): 223-235.

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