Research Progress of Surface Activated Bonding at Room Temperature

doi:10.3901/JME.2022.02.136

Abstract

Abstract: With the demand increase of low temperature wafer bonding technology in the semiconductor field, surface activated bonding (SAB) technology has been extensively studied. Compared with other bonding methods, SAB can achieve a strong bonding for most materials of metals and semiconductors even at room temperature without any heating process. However, SAB is not very suitable for SiO₂ and polymer, which limits its application. In recent years, two modified surface activated bonding (modified SAB) methods have been developed. By depositing an intermediate nano-layer after/during surface activation, the original wafer bonding become the bonding between two inter-layers. In terms of bonding mechanism, the principle of both surface activation and bonding formation of interfacial atoms as well as the influence of environmental factors on bonding strength were analyzed. The advantages and disadvantages of the three SAB methods are compared through the analysis and summary of previous researches, which is expected to promote the further wide application of SAB technology in semiconductor field.

Key words: wafer bonding, bonding interface, surface activated bonding, room temperature

CLC Number:

TN305

ZHANG Hongze, TIAN Ye, MENG Ying, MU Fengwen, WANG Xinhua, LIU Xinyu. Research Progress of Surface Activated Bonding at Room Temperature[J]. Journal of Mechanical Engineering, 2022, 58(2): 136-146.

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