• CN: 11-2187/TH
  • ISSN: 0577-6686

Journal of Mechanical Engineering ›› 2022, Vol. 58 ›› Issue (2): 34-42.doi: 10.3901/JME.2022.02.034

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Research on Low-temperature Bonding Technology Using Metal Nanoparticles Prepared by Magnetron Sputtering

FANG Junpeng1, WANG Qian1,2, CAI Jian1,2, WAN Hanlin1, SONG Changming1, ZHENG Kai3, ZHOU Yikang3   

  1. 1. School of Integrated Circuits, Tsinghua University, Beijing 100084;
    2. Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084;
    3. Semiconductor Technology Innovation Center(Beijing) Corp., Beijing 100176
  • Received:2021-10-09 Revised:2021-12-20 Online:2022-01-20 Published:2022-03-19

Abstract: Three dimensional integration (3D integration) is one of the key technology routes for heterogeneous integration in post-Moore era, and inter-chip interconnection is the key technology of 3D integration. The traditional metal thermo-compression bonding technology exists problems of high bonding temperature and long bonding time, which is no longer suitable for the development needs of 3D integration technology. New inter-chip interconnection technology featuring low-temperature, time-saving and highly reliable thermo-compression bonding has attracted extensive attention. A low-temperature bonding method based on metal nanoparticles prepared by magnetron sputtering is proposed. Firstly, Ag and Au nanoparticles were separately prepared by magnetron sputtering method, and the obtained metal nanoparticles were used as the modification layer of bonding interface in the low-temperature bonding experiment. The low-temperature and time-saving thermo-compression bonding was realized with bonding temperature less than 200℃ and bonding time of 3 minutes. Then, shear strength tests of bonded samples were carried out. Test results showed that average shear strength of bonded samples with Ag nanoparticles as nano-modification layer exceeded 10 MPa; and average shear strength of bonded samples modified by Au nanoparticles exceeded 15 MPa. Both the above average shear strength exceeded the film adhesion strength between Cr and SiO2. In addition, microstructures of bonding interface of different samples were observed, and the bonding mechanism of low-temperature bonding technology based on metal nanoparticles prepared by magnetron sputtering was analyzed.

Key words: inter-chip interconnection, nano-modification, low-temperature and time-saving thermo-compression bonding

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