Research on the Process Model for Focused Ion Beam Sputtering Etching Micro/Nanofabrication

doi:10.3901/JME.2016.05.101

Abstract

Abstract: A new model based on the continuous cellular automaton (CCA) is introduced for the focused ion beam (FIB) etching process simulation. By considering the actual process parameters and the scan strategies, this method provides new sputtering and re-deposition functions to describe the effects, as well as the evolution of surface structures accurately. In various process conditions and scan strategies, the simulation results, compared with the experiments, show good performance in the reproduction of the sputtering and the re-deposition effects. And the cross-section profiles are successfully reproduced with etching depth relative error less than 8%, which validates this model. Compared with the reported simulation results, the proposed CCA model improves the simulation accuracy and the visual output, which provides a good solution in guiding the process parameter design and optimization for FIB micro-nanofabrication.

Key words: continuous cellular automaton, focused ion beam etching, process simulation, re-deposition effect

CLC Number:

O414

LI Yuan, XING Yan, QIU Xiaoli. Research on the Process Model for Focused Ion Beam Sputtering Etching Micro/Nanofabrication[J]. Journal of Mechanical Engineering, 2016, 52(5): 101-106.

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