Experimental Study on Magnetorheological Chemical Polishing for Sapphire Substrate

doi:10.3901/JME.2016.05.080

Abstract

Abstract: Machining mechanism of magnetorheological chemical polishing is analyzed. Polishing experiments are conducted for sapphire substrate. The results show that magnetorheological chemical polishing sapphire substrate can be processed to sub-nanometer roughness ultra smooth mirror, the material removal rate is affected by the chemical reaction rate and shear action to remove the chemical reaction rate is faster, the stronger the shear removed, material removal rate is higher;higher removal rate is obtained when the magnetorheological chemical fluid which contains colloidal silica and α-Al₂O₃ abrasive is used as polishing slurry. The material removal rate decreases with the increase in work gap, excitation gap and polishing time, but with the decrease in particle concentrations. Ultra-smooth surface of 0.3 nm in R_ais achieved by using magnetorheological chemical polishing.

Key words: magnetorheological chemical polishing, material removal rate, sapphire substrate, ultra-smooth mirror surface

CLC Number:

TH161

YIN Shaohui, WANG Yongqiang, LI Yepeng, KANG Renke, CHEN Fengjun, HU Tian. Experimental Study on Magnetorheological Chemical Polishing for Sapphire Substrate[J]. Journal of Mechanical Engineering, 2016, 52(5): 80-87.

References

[1] 王银珍,周圣明,徐军．蓝宝石衬底的化学机械抛光技术的研究[J]．人工晶体学报,2004,33(3)：441-447．
WANG Yinzhen,ZHOU Shengming,XU Jun．Research of chemical mechanical polishing technique of sapphire substrate[J]．Journal of Synthetic Crystals,2004,33(3)：441-447．
[2] 周兆忠,袁巨龙,文东辉．蓝宝石衬底的超光滑表面加工进展[J]．航空精密制造技术,2009,45(3)：8-13．
ZHOU Zhaozhong,YUAN Julong,WEN Donghui．Survey on the progress of ultra-smooth sapphire wafer surface[J]．Aviation Precision Manufacturing Technology,2009,45(3)：8-13．
[3] 赵之雯,牛新环,檀柏梅,等．蓝宝石衬底材料CMP 抛光工艺研究[J]．微纳电子技术,2006(1)：16-19．
ZHAO Zhiwen,NIU Xinhuan,TAN Baimei,et al. Research of sapphire substrate CMP[J]. Micronanoelectronic Technology,2006(1)：16-19．
[4] LI Z C,PEI Z J,FUNKENBUSCH D．Machining processes for sapphire wafers：A literature review[J]．Proceedings of the Institution of Mechanical Engineers,Part B：Journal of Engineering Manufacture,2011,225(7)：975-989．
[5] SUDARSHAN T S,RADHAKRISHNAN R．Polishing techniques for optical grade sapphire[J]．Materials Science and Technology,2000,16(9)：958-960．
[6] LEE H, KASUGA H, OHMORI H,et al. Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard-brittle materials used in light-emitting diodes[J]．Journal of Crystal Growth,2011,326：140-146．
[7] WANG Y Q,YIN S H,HUANG H,et al. Magnetorheological polishing using a permanent magnetic yoke with straight air gap for ultra-smooth surface planarization[J]. Precision Engineering,2015,40：309-317．
[8] 尹韶辉,徐志强,陈逢军,等. 小口径非球面斜轴磁流变抛光技术[J]. 机械工程学报,2013,49 (9)：33-37．
YIN Shaohui,XU Zhiqiang,CHEN Fengjun,et al. Inclined axis magnetorheological finishing technology for small aspherical surface[J]. Journal of Mechanical Engineering,2013,49 (9)：33-37.
[9] 李圣怡,彭小强．光学零件可控柔体制造的理论基础与方法[J]．机械工程学报,2013,49(17)：1-9．
LI Shengyi,PENG Xiaoqiang．Basic theory and method of controllable compliant tools for optic elements manufacturing[J]．Journal of Mechanical Engineering,2013,49(17)：1-9．
[10] KORDONSKI W I,JACOBS S D,GOLINI D,et al. Vertical wheel magnetorheological finishing machine for flat,convex,and concave surfaces[J]. Optical Fabrication and Testing,1996,7：146-149．
[11] 柴京富．集群磁流变效应研磨刷研抛工具加工机理研究[D]．广州：广东工业大学,2011.
CHAI Jingfu. Study on machining mechanism of polishing tool with grinding brush cluster based on magnetorheological effect[D]．Guangzhou：Guangdong University of Technology,2011.
[12] JAIN V K,RANJAN P,SURI V K,et al．Chemo-mechanical magnetorheological finishing (CMMRF) of silicon for microelectronics applications[J]． CIRP Annals - Manufacturing Technology,2010,59：323-328．
[13] ZHU H L,TESSAROTO L A,SABIA R,et al．Chemical mechanical polishing (CMP) anisotropy in sapphire[J]．Applied Surface Science,2004,236：120-130．
[14] VOVK E A,BUDNIKOV A T,DOBROTVORSKAYA M V,et al．Mechanism of the interaction between Al 2 O 3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide[J]．Journal of Surface Investigation,2012,6(1)：115-121．
[15] LEE H,LEE H,JEONG H,et al. Macroscopic and microscopic investigation on chemical mechanical polishing of sapphire wafer[J]．Journal of Nanoscience and Nanotechnology,2012,12(2)：1256-1259.
[16] TAO R. Super-strong magnetorheological fluids[J]．Journal of Physics：Condensed Matter,2001,13：R979-R999．
[17] SIDPARA A,JAIN V K. Theoretical analysis of forces in magnetorheological fluid based finishing process[J]．International Journal of Mechanical Sciences, 2012,56：50-59．